IITGN Researchers Develop Scalable Ultra-Thin Insulator for Advanced Semiconductor Devices
STORY CREDITS Writer: Tanumita Misra Photo: Arijit Reeves The new material, developed using titanium diboride-derived nanosheet through a simple, scalable room‑temperature method, offers performance suited for future high‑speed, low‑power semiconductor devices A few decades ago, computers capable of performing complex tasks filled entire rooms. Today, that same power fits in our pockets, built into devices lighter than a paperback. This leap has been driven by advances in semiconductor technology, where billions of tiny switches called transistors control the flow of electrical signals in everything from smartphones to satellites. With users demanding faster, lighter, and more energy-efficient electronics, designing materials that enable...
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